Dr. Yuanjie Li
November 7, 2011
1:30 PM - 2:30 PM
Doping and Characterization of Zinc Oxide Based Thin Films for Optoelectronic Device Applications
Semiconducting zinc oxide shows great promise for applications in transparent high power electronics, UV light emitting diodes and laser diodes. Achieving reliable and low resistivity p-type material remains a major challenge facing further development of ZnO based devices. In this presentation, phosphorus and magnesium doped ZnO films have been studied to realize p-type conductivity and gallium doped ZnO films have been discussed for the applications in transparent electrode. As for intrinsic dopant in ZnO, hydrogen doping has been investigated using experimental and theoretical modeling methods. Multi-element codoping of ZnO will also be presented for broadening crystalline to amorphous films for the applications in thin film transistors. Characterization of the structural, electrical, optical and chemical bonding properties of doped ZnO films will be discussed in this presentation.
Dr. Yuanjie Li obtained a Ph.D. degree in electronic materials from University of Florida, USA in 2006. From 2007-2008, Dr. Li worked as a post-doc research associate in Pacific Northwest National Laboratory, USA. Dr. Li graduated from Beijing University of Aeronautics and Astronautics with a Bachelor and Master degree in materials science in 1997 and 2000, respectively. In 2008, she joined the School of Electronic and Information Engineering, Xi’an Jiaotong University, China as a faculty member. Her research interests focus on growth, characterization and device applications of semiconducting oxide thin films for optoelectronic devices, flat panel display and solar cell applications. Dr. Li has been awarded by American Vacuum Society, Florida Chapter in Materials Characterization in 2005 and Academic Achievement Awards from University of Florida from 2002 to 2005. She is currently member of American Vacuum Society.
Date posted
Jun 20, 2019
Date updated
Jun 20, 2019